Invention Publication
- Patent Title: GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY
-
Application No.: US18088542Application Date: 2022-12-24
-
Publication No.: US20240213331A1Publication Date: 2024-06-27
- Inventor: Han Wui THEN , Sansaptak DASGUPTA , Pratik KOIRALA , Wesley HARRISON , Marko RADOSAVLJEVIC
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L29/78
Abstract:
Gallium nitride (GaN) layer on substrate carburization for integrated circuit technology is described. In an example, an integrated circuit structure includes a substrate including silicon. A layer comprising silicon and carbon is above the substrate. A layer comprising gallium and nitrogen is on the layer comprising silicon and carbon.
Information query
IPC分类:
