公开(公告)号：US20240213331A1

公开(公告)日：2024-06-27

申请号：US18088542

申请日：2022-12-24

Applicant: Intel Corporation

Inventor： Han Wui THEN ,  Sansaptak DASGUPTA ,  Pratik KOIRALA ,  Wesley HARRISON ,  Marko RADOSAVLJEVIC

IPC: H01L29/20 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/2003 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7838

Abstract: Gallium nitride (GaN) layer on substrate carburization for integrated circuit technology is described. In an example, an integrated circuit structure includes a substrate including silicon. A layer comprising silicon and carbon is above the substrate. A layer comprising gallium and nitrogen is on the layer comprising silicon and carbon.