- 专利标题： METHOD FOR MANUFACTURING EPITAXIAL WAFER FOR ULTRAVIOLET RAY EMISSION DEVICE, METHOD FOR MANUFACTURING SUBSTRATE FOR ULTRAVIOLET RAY EMISSION DEVICE, EPITAXIAL WAFER FOR ULTRAVIOLET RAY EMISSION DEVICE, AND SUBSTRATE FOR ULTRAVIOLET RAY EMISSION DEVICE
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申请号： US18279579申请日： 2022-02-16
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公开(公告)号： US20240234623A9公开(公告)日： 2024-07-11
- 发明人: Keitaro TSUCHIYA , Masato YAMADA
- 申请人： SHIN-ETSU HANDOTAI CO., LTD.
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU HANDOTAI CO., LTD.,SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人： SHIN-ETSU HANDOTAI CO., LTD.,SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人地址： JP Tokyo; JP Tokyo
- 优先权： JP 21034203 2021.03.04
- 国际申请： PCT/JP2022/006033 2022.02.16
- 进入国家日期： 2023-08-30
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L33/06 ; H01L33/32
摘要：
The present invention is a method for manufacturing an epitaxial wafer for an ultraviolet ray emission device, the method including steps of: preparing a supporting substrate having at least one surface composed of gallium nitride; forming a bonding layer on the surface composed of the gallium nitride of the supporting substrate; forming a laminated substrate having a seed crystal layer by laminating a seed crystal composed of an AlxGa1-xN (0.5
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