A power semiconductor module includes: an electrically insulative frame; a plurality of power semiconductor dies housed within the electrically insulative frame and electrically interconnected to form a power electronics circuit; an active temperature sensor die housed within the electrically insulative frame and including an integrated current source; a first temperature sense terminal electrically connected to a first contact pad of the active temperature sensor die; and a second temperature sense terminal electrically connected to a second contact pad of the active temperature sensor die. A discrete power semiconductor device and methods of producing the module and discrete device are also described.