公开(公告)号：US20240243042A1

公开(公告)日：2024-07-18

申请号：US18097358

申请日：2023-01-16

Applicant: Infineon Technologies AG

Inventor： Tillmann Walther ,  Markus Neubert ,  Andrey Kravchenko ,  Christian Schweikert

IPC: H01L23/495 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L23/49568 ,  H01L23/49558 ,  H01L23/49575 ,  H01L24/48 ,  H01L25/0655 ,  H01L2224/48091

Abstract: A power semiconductor module includes: an electrically insulative frame; a plurality of power semiconductor dies housed within the electrically insulative frame and electrically interconnected to form a power electronics circuit; an active temperature sensor die housed within the electrically insulative frame and including an integrated current source; a first temperature sense terminal electrically connected to a first contact pad of the active temperature sensor die; and a second temperature sense terminal electrically connected to a second contact pad of the active temperature sensor die. A discrete power semiconductor device and methods of producing the module and discrete device are also described.