- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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申请号： US18451218申请日： 2023-08-17
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公开(公告)号： US20240274703A1公开(公告)日： 2024-08-15
- 发明人: Yosuke KAJIWARA , Miyoko SHIMADA , Kento MINAMIKAWA , Hiroshi ONO , Daimotsu KATO , Masahiko KURAGUCHI
- 申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- 当前专利权人地址： JP Tokyo; JP Tokyo
- 优先权： JP 23020566 2023.02.14
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/20 ; H01L29/66
摘要：
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0≤x1
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