A device structure includes a first dielectric material layer, a first conductive interconnect structure embedded in the first dielectric material layer and including a first metallic barrier liner and a first metal fill material portion having a top surface within a first horizontal plane, where the first metallic barrier liner laterally surrounds the first metal fill material portion and has a top surface below the first horizontal plane such that a moat-shaped divot is located between the first metal fill material portion and the first dielectric material layer, a divot-fill dielectric portion located in the moat-shaped divot and contacting the top surface of the first metallic barrier liner, a second dielectric material layer overlying the first dielectric material layer, and a second conductive interconnect structure embedded in the second dielectric material layer and contacting at least a segment of the top surface of the first metal fill material portion.