公开(公告)号：US20230361069A1

公开(公告)日：2023-11-09

申请号：US17930858

申请日：2022-09-09

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Kensuke ISHIKAWA ,  Fumitaka AMANO ,  Shingo TOTANI ,  Linghan CHEN

IPC: H01L23/00 ,  H01L25/18

CPC classification number: H01L24/08 ,  H01L24/05 ,  H01L24/80 ,  H01L25/18 ,  H01L2224/08145 ,  H01L2224/05647 ,  H01L2224/80379 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/05649 ,  H01L2224/131 ,  H01L24/13

Abstract: A bonded assembly includes a first semiconductor die containing first semiconductor devices and a first bonding pad embedded within a first silicon oxide layer, where the first bonding pad includes a first copper containing portion, a second semiconductor die containing second semiconductor devices and a second bonding pad that is embedded within a second silicon oxide layer and is bonded to the first bonding pad via metal-to-metal bonding, where the second bonding pad includes a second copper containing portion, and at least one metal silicon oxide layer interposed between the first bonding pad and the second silicon oxide layer. In one embodiment, the at least one metal silicon oxide layer is a manganese silicon oxide layer.

公开(公告)号：US20230361066A1

公开(公告)日：2023-11-09

申请号：US17662493

申请日：2022-05-09

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Linghan CHEN ,  Lin HOU

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00

CPC classification number: H01L24/08 ,  H01L25/0657 ,  H01L25/18 ,  H01L24/05 ,  H01L24/03 ,  H01L24/80 ,  H01L25/50 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/0807 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/03616

Abstract: Bonding strength and yield can be enhanced by providing a mating pair of a convex bonding surface and a concave bonding surface. The convex bonding surface can be provided by employing a conductive barrier layer having a higher electrochemical potential than copper. The concave bonding surface can be provided by employing a conductive barrier layer having a lower electrochemical potential than copper. Alternatively additionally, a copper material portion in a bonding pad may include at least 10% volume fraction of (200) copper grains to provide high volume expansion toward a mating copper material portion. The mating copper material portion may be formed with at least 95% volume fraction of (111) copper grains to provide high surface diffusivity, or may be formed with at least 10% volume fraction of (200) copper grains to provide high volume expansion.

公开(公告)号：US20240282710A1

公开(公告)日：2024-08-22

申请号：US18359610

申请日：2023-07-26

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Linghan CHEN ,  Fumitaka AMANO

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5329 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H10B43/20 ,  H10B51/20 ,  H10B63/10

Abstract: A device structure includes a first dielectric material layer, a first conductive interconnect structure embedded in the first dielectric material layer and including a first metallic barrier liner and a first metal fill material portion having a top surface within a first horizontal plane, where the first metallic barrier liner laterally surrounds the first metal fill material portion and has a top surface below the first horizontal plane such that a moat-shaped divot is located between the first metal fill material portion and the first dielectric material layer, a divot-fill dielectric portion located in the moat-shaped divot and contacting the top surface of the first metallic barrier liner, a second dielectric material layer overlying the first dielectric material layer, and a second conductive interconnect structure embedded in the second dielectric material layer and contacting at least a segment of the top surface of the first metal fill material portion.