- 专利标题： METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE
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申请号： US18609418申请日： 2024-03-19
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公开(公告)号： US20240282801A1公开(公告)日： 2024-08-22
- 发明人: Takeshi Kadono , Kazunari Kurita
- 申请人： SUMCO Corporation
- 申请人地址： JP Tokyo
- 专利权人： SUMCO Corporation
- 当前专利权人： SUMCO Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP 12249731 2012.11.13
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; C23C14/48 ; C30B25/18 ; C30B29/06 ; H01L21/02 ; H01L21/265 ; H01L21/322 ; H01L21/324 ; H01L29/167
摘要：
The present invention provides a method of producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability.
The method of producing a semiconductor epitaxial wafer includes a first step of irradiating a surface portion 10A of a semiconductor wafer 10 with cluster ions 16 thereby forming a modifying layer 18 formed from carbon and a dopant element contained as a solid solution that are constituent elements of the cluster ions 16, in the surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer, the epitaxial layer 20 having a dopant element concentration lower than the peak concentration of the dopant element in the modifying layer 18.
The method of producing a semiconductor epitaxial wafer includes a first step of irradiating a surface portion 10A of a semiconductor wafer 10 with cluster ions 16 thereby forming a modifying layer 18 formed from carbon and a dopant element contained as a solid solution that are constituent elements of the cluster ions 16, in the surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer, the epitaxial layer 20 having a dopant element concentration lower than the peak concentration of the dopant element in the modifying layer 18.
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