- 专利标题: ION COLLECTOR FOR USE IN PLASMA SYSTEMS
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申请号: US18654822申请日: 2024-05-03
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公开(公告)号: US20240290588A1公开(公告)日: 2024-08-29
- 发明人: Otto CHEN , Chi-Ying WU , Chia-Chih CHEN
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 分案原申请号: US16704858 2019.12.05
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01J37/244
摘要:
An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.
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