Invention Publication
- Patent Title: ETCHING GAS AND ETCHING METHOD USING THE SAME
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Application No.: US18376034Application Date: 2023-10-03
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Publication No.: US20240294829A1Publication Date: 2024-09-05
- Inventor: Yeonock HAN , Jinkoo PARK , Do Hoon KIM , Hoin KANG , Bongsuk KIM , Kyungeun LEE , Wonwoong CHUNG
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Foosung Co., Ltd.
- Current Assignee: Foosung Co., Ltd.
- Current Assignee Address: KR Seongnam-si
- Priority: KR 20230028504 2023.03.03
- Main IPC: C09K13/00
- IPC: C09K13/00 ; H01L21/311
Abstract:
An etching gas and an etching method, the etching gas includes hydrogen gas; a halogen gas; a first gas; and a second gas, wherein the first gas includes a phosphorus atom, and the second gas includes a carbon atom and two or more halogen atoms that are different from each other.
Information query
