公开(公告)号：US20240294829A1

公开(公告)日：2024-09-05

申请号：US18376034

申请日：2023-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonock HAN ,  Jinkoo PARK ,  Do Hoon KIM ,  Hoin KANG ,  Bongsuk KIM ,  Kyungeun LEE ,  Wonwoong CHUNG

IPC: C09K13/00 ,  H01L21/311

CPC classification number: C09K13/00 ,  H01L21/31116

Abstract: An etching gas and an etching method, the etching gas includes hydrogen gas; a halogen gas; a first gas; and a second gas, wherein the first gas includes a phosphorus atom, and the second gas includes a carbon atom and two or more halogen atoms that are different from each other.