- 专利标题: POWER TRANSISTOR CHIP PACKAGE
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申请号: US18599704申请日: 2024-03-08
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公开(公告)号: US20240304528A1公开(公告)日: 2024-09-12
- 发明人: Ralf Otremba , Leo Aichriedler , Daniel Hölzl , Gerald Wriessnegger , Soumya Susovita Nayak
- 申请人: Infineon Technologies Austria AG
- 申请人地址: AT Villach
- 专利权人: Infineon Technologies Austria AG
- 当前专利权人: Infineon Technologies Austria AG
- 当前专利权人地址: AT Villach
- 优先权: EP 161033.8 2023.03.09
- 主分类号: H01L23/495
- IPC分类号: H01L23/495 ; H01L23/00 ; H01L25/11 ; H01L25/16
摘要:
A power transistor chip package includes a power transistor chip having a first load electrode on a first side, a second load electrode on a second (opposite) side, and a control electrode. The power transistor chip is disposed on a chip pad, with the first side facing the pad and the first load electrode electrically connected to the pad. An encapsulation body encapsulates the power transistor chip and includes a footprint side, a top (opposite) side, and side faces extending between the footprint and top sides. A first package load terminal is electrically connected to the first load electrode. Part I and part II second package load terminals are both electrically connected directly to the second load electrode. A package control terminal is electrically connected to the control electrode. The part I and part II second package load terminals are aligned with opposite sides faces of the encapsulation body.
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