公开(公告)号：US20240304528A1

公开(公告)日：2024-09-12

申请号：US18599704

申请日：2024-03-08

Applicant: Infineon Technologies Austria AG

Inventor： Ralf Otremba ,  Leo Aichriedler ,  Daniel Hölzl ,  Gerald Wriessnegger ,  Soumya Susovita Nayak

IPC: H01L23/495 ,  H01L23/00 ,  H01L25/11 ,  H01L25/16

CPC classification number: H01L23/49562 ,  H01L23/49555 ,  H01L23/49568 ,  H01L24/40 ,  H01L24/48 ,  H01L25/112 ,  H01L25/117 ,  H01L25/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/48245 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13062 ,  H01L2924/13091

Abstract: A power transistor chip package includes a power transistor chip having a first load electrode on a first side, a second load electrode on a second (opposite) side, and a control electrode. The power transistor chip is disposed on a chip pad, with the first side facing the pad and the first load electrode electrically connected to the pad. An encapsulation body encapsulates the power transistor chip and includes a footprint side, a top (opposite) side, and side faces extending between the footprint and top sides. A first package load terminal is electrically connected to the first load electrode. Part I and part II second package load terminals are both electrically connected directly to the second load electrode. A package control terminal is electrically connected to the control electrode. The part I and part II second package load terminals are aligned with opposite sides faces of the encapsulation body.

公开(公告)号：US10658497B2

公开(公告)日：2020-05-19

申请号：US16054236

申请日：2018-08-03

Applicant: Infineon Technologies Austria AG

Inventor： Daniel Hölzl ,  Henning Kraack ,  Gabor Mezoesi ,  Hans-Joachim Schulze ,  Waqas Mumtaz Syed

IPC: H01L29/739 ,  H01L29/66 ,  H01L29/06 ,  C30B31/22 ,  H01L21/322 ,  C30B29/06 ,  H01L21/306 ,  H01L29/08

Abstract: A method for forming semiconductor device includes providing a semiconductor substrate having an initial surface oxygen concentration in a surface region of less than 6×1017 cm−3, forming an epitaxial layer on a first side of the semiconductor substrate, and implanting dopants into the epitaxial layer. An optional thermal anneal is carried out prior to forming the epitaxial layer and/or a thermal treatment is carried out after implanting dopants.

公开(公告)号：US20190043971A1

公开(公告)日：2019-02-07

申请号：US16054236

申请日：2018-08-03

Applicant: Infineon Technologies Austria AG

Inventor： Daniel Hölzl ,  Henning Kraack ,  Gabor Mezoesi ,  Hans-Joachim Schulze ,  Waqas Mumtaz Syed

IPC: H01L29/739 ,  H01L29/66 ,  H01L29/08 ,  C30B29/06 ,  H01L21/306

Abstract: A method for forming semiconductor device includes providing a semiconductor substrate having an initial surface oxygen concentration in a surface region of less than 6×1017 cm−3, forming an epitaxial layer on a first side of the semiconductor substrate, and implanting dopants into the epitaxial layer. An optional thermal anneal is carried out prior to forming the epitaxial layer and/or a thermal treatment is carried out after implanting dopants.

公开(公告)号：US10957788B2

公开(公告)日：2021-03-23

申请号：US16854247

申请日：2020-04-21

Applicant: Infineon Technologies Austria AG

Inventor： Daniel Hölzl ,  Henning Kraack ,  Gabor Mezoesi ,  Hans-Joachim Schulze ,  Waqas Mumtaz Syed

IPC: H01L29/739 ,  H01L21/306 ,  H01L29/06 ,  C30B31/22 ,  H01L21/322 ,  C30B29/06 ,  H01L29/08 ,  H01L29/66

Abstract: A semiconductor device includes: a semiconductor substrate having a bulk oxygen concentration of at least 6×1017 cm−3; an epitaxial layer on a first side of the semiconductor substrate, the epitaxial layer and the semiconductor substrate having a common interface; a superjunction semiconductor device structure in the epitaxial layer; and an interface region extending from the common interface into the semiconductor substrate to a depth of at least 10 μm. A mean oxygen concentration of the interface region is lower than the bulk oxygen concentration of the semiconductor substrate.

公开(公告)号：US20200251580A1

公开(公告)日：2020-08-06

申请号：US16854247

申请日：2020-04-21

Applicant: Infineon Technologies Austria AG

Inventor： Daniel Hölzl ,  Henning Kraack ,  Gabor Mezoesi ,  Hans-Joachim Schulze ,  Waqas Mumtaz Syed

IPC: H01L29/739 ,  H01L21/322 ,  C30B31/22 ,  H01L29/06 ,  H01L29/66 ,  H01L29/08 ,  H01L21/306 ,  C30B29/06

Abstract: A semiconductor device includes: a semiconductor substrate having a bulk oxygen concentration of at least 6×1017 cm−3; an epitaxial layer on a first side of the semiconductor substrate, the epitaxial layer and the semiconductor substrate having a common interface; a superjunction semiconductor device structure in the epitaxial layer; and an interface region extending from the common interface into the semiconductor substrate to a depth of at least 10 μm. A mean oxygen concentration of the interface region is lower than the bulk oxygen concentration of the semiconductor substrate.