- 专利标题： BACKSIDE DECOUPLING CAPACITOR INTEGRATION WITH BACKSIDE CONTACT
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申请号： US18186236申请日： 2023-03-20
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公开(公告)号： US20240321687A1公开(公告)日： 2024-09-26
- 发明人: Ruilong Xie , Nicholas Anthony Lanzillo , Lawrence A. Clevenger , Huai Huang , Hosadurga Shobha
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/66 ; H01L29/775 ; H01L29/786 ; H01L29/94
摘要：
Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. First and second FETs are formed. A top surface of the semiconductor structure is bonded to a carrier wafer. The semiconductor structure is flipped. A MIM capacitor plane comprising first and second metal layers is formed. An ILD layer is formed on the MIM capacitor plane. A first trench is formed within the MIM capacitor plane and the ILD layer. Exposed portions of the first metal layer are recessed within the first trench. A second trench is formed within the MIM capacitor plane and the ILD layer. Exposed portions of the second metal layer are recessed. Dielectric spacers are formed in the recesses. A first backside contact is formed in the first trench and a second backside contact is formed in the second trench.
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