Invention Publication
- Patent Title: BARRIER-FREE INTERCONNECT STRUCTURE AND MANUFACTURING METHOD THEREOF
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Application No.: US18738236Application Date: 2024-06-10
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Publication No.: US20240332169A1Publication Date: 2024-10-03
- Inventor: Pei-Yu Wang , Cheng-Ting Chung , Wei Ju Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- The original application number of the division: US16572670 2019.09.17
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768
Abstract:
Semiconductor devices and method of forming the same are disclosed herein. A semiconductor device according to the present disclosure includes a first dielectric layer having a first top surface and a contact via extending through the first dielectric layer and rising above the first top surface of the first dielectric layer.
Information query
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