- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
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申请号： US18744752申请日： 2024-06-17
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公开(公告)号： US20240339490A1公开(公告)日： 2024-10-10
- 发明人: Bungo TANAKA , Keiji WADA
- 申请人： ROHM CO., LTD.
- 申请人地址： JP Kyoto-shi
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto-shi
- 优先权： JP 21204863 2021.12.17 JP 21204864 2021.12.17 JP 21210542 2021.12.24
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; G01R19/00
摘要：
A semiconductor device includes a substrate, a lower insulating film that is formed on the substrate, a resistor that is formed on the lower insulating film, and an upper insulating film that is formed on the lower insulating film such as to cover the resistor. The lower insulating film includes a first nitride film and a first SiO-based insulating film that is formed on the first nitride film and the upper insulating film includes a second nitride film. The resistor is formed on the first SiO-based insulating film and a lower surface of a peripheral edge portion of the second nitride film is joined to an upper surface of the first nitride film.
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