利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

38 条记录 (耗时 0.022 秒)

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    1.
    发明公开
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开

    公开(公告)号：US20240339490A1

    公开(公告)日：2024-10-10

    申请号：US18744752

    申请日：2024-06-17

    申请人： ROHM CO., LTD.

    发明人： Bungo TANAKA ,  Keiji WADA

    IPC分类号： H01L23/00 ,  G01R19/00

    CPC分类号： H01L28/20 ,  H01L23/564 ,  G01R19/0084

    摘要： A semiconductor device includes a substrate, a lower insulating film that is formed on the substrate, a resistor that is formed on the lower insulating film, and an upper insulating film that is formed on the lower insulating film such as to cover the resistor. The lower insulating film includes a first nitride film and a first SiO-based insulating film that is formed on the first nitride film and the upper insulating film includes a second nitride film. The resistor is formed on the first SiO-based insulating film and a lower surface of a peripheral edge portion of the second nitride film is joined to an upper surface of the first nitride film.

    INSULATING TRANSFORMER
    3.
    发明公开
    INSULATING TRANSFORMER 审中-公开

    公开(公告)号：US20240029949A1

    公开(公告)日：2024-01-25

    申请号：US18475265

    申请日：2023-09-27

    申请人： ROHM CO., LTD.

    发明人： Bungo TANAKA

    IPC分类号： H01F27/40 ,  H01F27/32 ,  H01F27/29 ,  H01G4/228 ,  H01F17/00

    CPC分类号： H01F27/40 ,  H01F27/324 ,  H01F27/29 ,  H01G4/228 ,  H01F17/0013 ,  H01L28/10

    摘要： An insulating transformer includes an insulation layer, a transformer embedded in the insulation layer, and a capacitor. The transformer includes first and second coils. The first coil includes a first signal terminal and a first ground terminal. The second coil is separated from the first coil in a thickness direction of the insulation layer and includes a second signal terminal and a second ground terminal. The capacitor includes first and second capacitor electrodes. The first capacitor electrode is connected to the first ground terminal of the first coil. The second capacitor electrode is located between the first capacitor electrode and the second coil and connected to the second ground terminal of the second coil. The insulating transformer further includes a first insulation film located between the first coil and the first capacitor electrode, and a second insulation film located between the second coil and the second capacitor electrode.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230083880A1

    公开(公告)日：2023-03-16

    申请号：US17801962

    申请日：2021-03-03

    申请人： ROHM CO., LTD.

    发明人： Bungo TANAKA

    IPC分类号： H01L21/762 ,  H01L21/8234

    摘要： A semiconductor device includes a semiconductor layer, an element isolation portion that is formed at the semiconductor layer and that defines an element region in the semiconductor layer, and a first contact that is formed in a linear shape along the element isolation portion in a plan view and that is electrically connected to the element isolation portion. The semiconductor device further includes a semiconductor substrate supporting the semiconductor layer and a buried layer formed so as to be contiguous to the semiconductor layer, and the element isolation portion may reach the semiconductor substrate through the buried layer from a front surface of the semiconductor layer.

    INSULATION CHIP AND SIGNAL TRANSMISSION DEVICE
    5.
    发明公开
    INSULATION CHIP AND SIGNAL TRANSMISSION DEVICE 审中-公开

    公开(公告)号：US20240313043A1

    公开(公告)日：2024-09-19

    申请号：US18675658

    申请日：2024-05-28

    申请人： ROHM CO., LTD.

    发明人： Bungo TANAKA

    IPC分类号： H01L25/16 ,  H01L23/00 ,  H01L23/14 ,  H01L29/92

    CPC分类号： H01L28/75 ,  H01L23/147 ,  H01L24/32 ,  H01L24/48 ,  H01L25/162 ,  H01L28/86 ,  H01L29/92 ,  H01L2224/32235 ,  H01L2224/48248

    摘要： An insulation chip includes an element insulation layer, a first capacitor, and a second capacitor. The first capacitor includes a first front surface-side electrode plate and a first back surface-side electrode plate that are disposed opposite each other. The second capacitor includes a second front surface-side electrode plate and a second back surface-side electrode plate. The second front surface-side electrode plate and the second back surface-side electrode plate are opposed to each other. In the element insulation layer, the first back surface-side electrode plate and the second back surface-side electrode plate are electrically connected. This signal transmission device includes: a first chip including a first circuit; the insulation chip; and a second chip including a second circuit configured to perform at least one of transmission and reception of a signal with the first circuit via the insulation chip.

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
    6.
    发明公开
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE 审中-公开

    公开(公告)号：US20240282805A1

    公开(公告)日：2024-08-22

    申请号：US18435699

    申请日：2024-02-07

    申请人： ROHM CO., LTD.

    发明人： Bungo TANAKA

    IPC分类号： H01L23/522

    CPC分类号： H01L28/20 ,  H01L23/5228

    摘要： The present disclosure provides a semiconductor device. The semiconductor device includes: a substrate; an element insulating layer, disposed on the substrate; and a semiconductor resistive layer, disposed within the element insulating layer. The semiconductor resistive layer extends along a first direction perpendicular to a thickness direction of the substrate and includes an uneven portion along the thickness direction.

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220367603A1

    公开(公告)日：2022-11-17

    申请号：US17772024

    申请日：2020-09-30

    申请人： ROHM CO., LTD.

    发明人： Bungo TANAKA

    IPC分类号： H01L49/02 ,  H01F27/28

    摘要： A semiconductor device includes a semiconductor chip that has a main surface, an insulating layer that is formed on the main surface, a functional device that is formed in at least one among the semiconductor chip and the insulating layer, a low potential terminal that is formed on the insulating layer and is electrically connected to the functional device, a high potential terminal that is formed on the insulating layer at an interval from the low potential terminal and is electrically connected to the functional device, and a seal conductor that is embedded as a wall in the insulating layer such as to demarcate a region including the functional device, the low potential terminal and the high potential terminal from another region in plan view, and is electrically separated from the semiconductor chip, the functional device, the low potential terminal and the high potential terminal.

    ELECTRONIC COMPONENT
    10.
    发明申请
    ELECTRONIC COMPONENT 有权

    公开(公告)号：US20210305157A1

    公开(公告)日：2021-09-30

    申请号：US17344208

    申请日：2021-06-10

    申请人： ROHM CO., LTD.

    发明人： Bungo TANAKA

    IPC分类号： H01L23/525

    摘要： An electronic component includes a lower insulating layer, an upper insulating layer formed on the lower insulating layer, a first via electrode embedded in the lower insulating layer, a second via electrode embedded in the lower insulating layer at an interval from the first via electrode, and a resistance layer that is made of a metal thin film, is interposed in a region between the lower insulating layer and the upper insulating layer, and is electrically connected to the first via electrode and the second via electrode.