发明公开
- 专利标题: PLASMA PROCESSING APPARATUS
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申请号: US18750539申请日: 2024-06-21
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公开(公告)号: US20240347325A1公开(公告)日: 2024-10-17
- 发明人: Yuki ONODERA , Takamitsu TAKAYAMA
- 申请人: Tokyo Electron Limited
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 优先权: JP 21209532 2021.12.23
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01L21/683
摘要:
A plasma processing apparatus includes: a stage having first and second placement surfaces; an elevating mechanism for raising and lowering a ring member on the second placement surface with respect to the second placement surface; a radio-frequency power source; and a controller for executing a cleaning process including an operation of separating the second placement surface and the ring member from each other by the elevating mechanism; and an operation of removing deposits accumulated on the stage and the ring member by supplying radio-frequency power from the radio-frequency power source to the stage to generate plasma. In the separation operation, a distance between the second placement surface and the ring member is set such that a density of plasma generated in a region between an outer edge of the first placement surface and a lower surface of the ring member is higher than that of plasma generated in other regions.
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