公开(公告)号：US20240087858A1

公开(公告)日：2024-03-14

申请号：US18518862

申请日：2023-11-24

Applicant: Tokyo Electron Limited

Inventor： Junichi SASAKI ,  Yubin YEO ,  Yuki ONODERA ,  Takamitsu TAKAYAMA

IPC: H01J37/32

CPC classification number: H01J37/32853 ,  H01J2237/334

Abstract: A cleaning method according to the present disclosure includes a first cleaning operation and a second cleaning operation, wherein the first cleaning operation includes: supplying a first processing gas to the interior of the chamber; and cleaning a region including the placement region of the stage by generating a first plasma from the first processing gas in a space defined by the placement region and the electrode, and the second cleaning operation includes: holding a dummy substrate at a predetermined position spaced by a predetermined distance from the placement region to face the placement region; supplying a second processing gas to the interior of the chamber; and cleaning a region including a periphery of the placement region of the stage by generating a second plasma from the second processing gas in a space defined by the dummy substrate held at the predetermined position and the electrode.

公开(公告)号：US20250006473A1

公开(公告)日：2025-01-02

申请号：US18882880

申请日：2024-09-12

Applicant: Tokyo Electron Limited

Inventor： Yuki ONODERA ,  Takamitsu TAKAYAMA

IPC: H01J37/32 ,  H01L21/687

Abstract: A plasma processing apparatus includes a processing container, a stage provided inside the processing container, the stage having a substrate placement surface and a ring-member placement surface surrounding an outer periphery of the substrate placement surface, a ring placed on the ring-member placement surface, a first elevating mechanism including first lift pins configured to support a substrate, a second elevating mechanism including second lift pins configured to support the ring, and a controller. The controller is configured to execute an operation (a) of cleaning an interior of the processing container using plasma in a state where a dummy substrate is supported on the first lift pins by controlling the first elevating mechanism, and an operation (b) of cleaning the interior of the processing container using the plasma in a state where the ring is supported on the second lift pins by controlling the second elevating mechanism.

公开(公告)号：US20240347325A1

公开(公告)日：2024-10-17

申请号：US18750539

申请日：2024-06-21

Applicant: Tokyo Electron Limited

Inventor： Yuki ONODERA ,  Takamitsu TAKAYAMA

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32862 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/2007 ,  H01L21/6831

Abstract: A plasma processing apparatus includes: a stage having first and second placement surfaces; an elevating mechanism for raising and lowering a ring member on the second placement surface with respect to the second placement surface; a radio-frequency power source; and a controller for executing a cleaning process including an operation of separating the second placement surface and the ring member from each other by the elevating mechanism; and an operation of removing deposits accumulated on the stage and the ring member by supplying radio-frequency power from the radio-frequency power source to the stage to generate plasma. In the separation operation, a distance between the second placement surface and the ring member is set such that a density of plasma generated in a region between an outer edge of the first placement surface and a lower surface of the ring member is higher than that of plasma generated in other regions.