- 专利标题： FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
-
申请号： US18758926申请日： 2024-06-28
-
公开(公告)号： US20240355680A1公开(公告)日： 2024-10-24
- 发明人: Chun-Cheng Chou , Ying-Liang Chuang , Chun-Neng Lin , Ming-Hsi Yeh , Kuo-Bin Huang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/033 ; H01L21/311
摘要：
A method for manufacturing a semiconductor device includes forming one or more work function layers over a semiconductor structure. The method includes forming a hardmask layer over the one or more work function layers. The method includes forming an adhesion layer over the hardmask layer. The method includes removing a first portion of a patternable layer that is disposed over the hardmask layer. The adhesion layer comprises an organic acid that concurrently bonds metal atoms of the hardmask layer and phenol groups of the patternable layer, thereby preventing an etchant from penetrating into a second portion of the patternable layer that still remains over the hardmask layer.
信息查询
IPC分类:
