- 专利标题: PAGE BUFFER, SEMICONDUCTOR MEMORY HAVING THE SAME, AND OPERATING METHOD OF THE SEMICONDUCTOR MEMORY
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申请号: US18768518申请日: 2024-07-10
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公开(公告)号: US20240363180A1公开(公告)日: 2024-10-31
- 发明人: Soo Yeol CHAI , Jong Woo KIM
- 申请人: SK hynix Inc.
- 申请人地址: KR Icheon-si Gyeonggi-do
- 专利权人: SK hynix Inc.
- 当前专利权人: SK hynix Inc.
- 当前专利权人地址: KR Icheon-si Gyeonggi-do
- 优先权: KR 20210045960 2021.04.08
- 分案原申请号: US17487705 2021.09.28
- 主分类号: G11C16/34
- IPC分类号: G11C16/34 ; G11C7/10 ; G11C16/10 ; G11C16/24 ; G11C16/26
摘要:
A page buffer includes a bit line controller connected between a bit line and a sensing node, wherein the bit line controller is capable of adjusting a potential level of the sensing node, based on a cell current amount of the bit line, by performing an evaluation operation. The page buffer also includes a first latch unit connected to the sensing node, wherein the first latch unit is capable of adjusting an operation period of the evaluation operation. The page buffer further includes a second latch unit for latching verify data, based on the potential level of the sensing node.
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