A method of processing an SiC wafer includes a laser processing step of applying a laser beam to the SiC wafer along projected dicing lines established thereon to sever a metal film on the SiC wafer along the projected dicing lines and form grooves in the SiC wafer along the projected dicing lines, a tape mounting step of mounting a tape on the metal film before or after the laser processing step, and a dividing step of gripping, vertically between gripping members, an area of the SiC wafer adjacent to one at a time of the projected dicing lines along which the SiC wafer is to be divided and pressing, with a pressing member, an area of the SiC wafer adjacent to and across the one of the projected dicing lines from the gripping members, thereby dividing the SiC wafer along the one of the projected dicing lines.