METHOD OF PROCESSING SiC WAFER
    1.
    发明公开

    公开(公告)号:US20240363414A1

    公开(公告)日:2024-10-31

    申请号:US18633811

    申请日:2024-04-12

    CPC classification number: H01L21/78

    Abstract: A method of processing an SiC wafer includes a laser processing step of applying a laser beam to the SiC wafer along projected dicing lines established thereon to sever a metal film on the SiC wafer along the projected dicing lines and form grooves in the SiC wafer along the projected dicing lines, a tape mounting step of mounting a tape on the metal film before or after the laser processing step, and a dividing step of gripping, vertically between gripping members, an area of the SiC wafer adjacent to one at a time of the projected dicing lines along which the SiC wafer is to be divided and pressing, with a pressing member, an area of the SiC wafer adjacent to and across the one of the projected dicing lines from the gripping members, thereby dividing the SiC wafer along the one of the projected dicing lines.

    SETTING METHOD OF PROTECTIVE COMPONENT AND MANUFACTURING METHOD OF PROTECTIVE COMPONENT

    公开(公告)号:US20210151331A1

    公开(公告)日:2021-05-20

    申请号:US17089984

    申请日:2020-11-05

    Abstract: A setting method of a protective component includes a resin supply step of supplying a thermoplastic resin to a flat support surface of a support table, and a protective component forming step of shaping the thermoplastic resin into a sheet shape through pressing and spreading the thermoplastic resin along the support surface while heating and softening the thermoplastic resin to form a protective component of the thermoplastic resin in the sheet shape on the support surface. The setting method includes also a protective component bonding step of bringing a front surface that is one surface of the workpiece into tight contact with one surface of the protective component in the sheet shape and heating the protective component in tight contact to bond the protective component to the workpiece, and a post-bonding cooling step of cooling the protective component heated in the protective component bonding step.

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