- 专利标题： SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER
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申请号： US18769739申请日： 2024-07-11
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公开(公告)号： US20240363754A1公开(公告)日： 2024-10-31
- 发明人: Feng-Ching CHU , Wei-Yang LEE , Feng-Cheng YANG , Yen-Ming CHEN
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 分案原申请号： US15692471 2017.08.31
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8238 ; H01L23/535 ; H01L27/088 ; H01L27/092 ; H01L29/06 ; H01L29/08 ; H01L29/161 ; H01L29/165 ; H01L29/167 ; H01L29/24 ; H01L29/267 ; H01L29/417 ; H01L29/66
摘要：
A semiconductor device structure is provided. The semiconductor device structure includes a first fin structure extended above a substrate along a first direction, and a first gate structure formed over the first fin structure along a second direction. The semiconductor device structure includes a first source/drain (S/D) structure formed over the first fin structure and adjacent to the first gate structure, and a cap layer formed on and in direct contact with the first S/D structure. The semiconductor device structure includes an isolation structure adjacent to the first gate structure and the first S/D structure along the first direction. The isolation structure extends from the first gate structure to the first S/D structure, and the first S/D structure has a protruding portion toward to the isolation structure, and the protruding portion of the first S/D structure is separated from the isolation structure by the cap layer.
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