公开(公告)号：US20220416035A1

公开(公告)日：2022-12-29

申请号：US17357052

申请日：2021-06-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Feng-Ching CHU ,  Wei-Yang LEE ,  Chia-Pin LIN

IPC分类号： H01L29/417 ,  H01L21/84 ,  H01L29/66 ,  H01L27/12

摘要： A semiconductor device structure and a formation method are provided. The semiconductor device structure includes a stack of channel structures and includes a first epitaxial structure and a second epitaxial structure adjacent to opposite sides of the channel structures. The semiconductor device structure also includes a gate stack wrapped around each of the channel structures and a backside conductive contact connected to the second epitaxial structure. The second epitaxial structure is between a top of the backside conductive contact and a top of the gate stack. The semiconductor device structure further includes a dielectric fin stacked over an isolation structure. The dielectric fin is adjacent to the second epitaxial structure, and the isolation structure is adjacent to the backside conductive contact. The isolation structure has a first height, the dielectric fin has a second height, and the second height is greater than the first height.

公开(公告)号：US20240363754A1

公开(公告)日：2024-10-31

申请号：US18769739

申请日：2024-07-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Feng-Ching CHU ,  Wei-Yang LEE ,  Feng-Cheng YANG ,  Yen-Ming CHEN

IPC分类号： H01L29/78 ,  H01L21/8238 ,  H01L23/535 ,  H01L27/088 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/24 ,  H01L29/267 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L29/7848 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L21/823878 ,  H01L23/535 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/785 ,  H01L27/0886 ,  H01L29/41791 ,  H01L29/7851

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a first fin structure extended above a substrate along a first direction, and a first gate structure formed over the first fin structure along a second direction. The semiconductor device structure includes a first source/drain (S/D) structure formed over the first fin structure and adjacent to the first gate structure, and a cap layer formed on and in direct contact with the first S/D structure. The semiconductor device structure includes an isolation structure adjacent to the first gate structure and the first S/D structure along the first direction. The isolation structure extends from the first gate structure to the first S/D structure, and the first S/D structure has a protruding portion toward to the isolation structure, and the protruding portion of the first S/D structure is separated from the isolation structure by the cap layer.

公开(公告)号：US20230063984A1

公开(公告)日：2023-03-02

申请号：US17446269

申请日：2021-08-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Feng-Ching CHU ,  I-Hsieh WONG ,  Wei-Yang LEE ,  Chia-Pin LIN

IPC分类号： H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

摘要： Methods and associated devices including the fabrication of a semiconductor structure that provides a silicon-on-insulator substrate. The semiconductor structure may be formed by providing a base substrate, forming a sacrificial layer over the base structure, and forming a semiconductor layer over the sacrificial layer. The sacrificial layer is removed to form a void that is filled with oxide. The semiconductor structure includes a dielectric support feature extending through the semiconductor and oxide layers and/or a portion of the oxide layer extends to the surface of the semiconductor layer.

公开(公告)号：US20230119318A1

公开(公告)日：2023-04-20

申请号：US18068374

申请日：2022-12-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Feng-Ching CHU ,  Wei-Yang LEE ,  Feng-Cheng YANG ,  Yen-Ming CHEN

IPC分类号： H01L29/78 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/267 ,  H01L29/167 ,  H01L23/535 ,  H01L21/8238 ,  H01L29/66

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a first fin structure extended above a substrate along a first direction, and a first gate structure formed over the first fin structure along a second direction. The semiconductor device structure includes a first source/drain (S/D) structure formed over the first fin structure and adjacent to the first gate structure, and a cap layer formed on and in direct contact with the first S/D structure. The semiconductor device structure includes an isolation structure formed adjacent to the first gate structure and the first S/D structure along the first direction, and a bottom surface of the isolation structure is lower than a bottom surface of the first gate structure and a bottom surface of the first S/D structure.

公开(公告)号：US20240339510A1

公开(公告)日：2024-10-10

申请号：US18745029

申请日：2024-06-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Feng-Ching CHU ,  Wei-Yang LEE ,  Chia-Pin LIN

IPC分类号： H01L29/417 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/41733 ,  H01L21/84 ,  H01L27/12 ,  H01L29/66742 ,  H01L29/42392 ,  H01L29/458 ,  H01L29/78696

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a stack of channel structures and a first epitaxial structure and a second epitaxial structure adjacent to opposite sides of the channel structures. The semiconductor device structure also includes a gate stack wrapped around the channel structures and a backside conductive contact connected to the second epitaxial structure. The second epitaxial structure is between a top of the backside conductive contact and a top of the gate stack. The semiconductor device structure further includes an etch stop layer extending along a sidewall of the backside conductive contact and a bottom of the gate stack.

公开(公告)号：US20210119049A1

公开(公告)日：2021-04-22

申请号：US17135316

申请日：2020-12-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Feng-Ching CHU ,  Wei-Yang LEE ,  Feng-Cheng YANG ,  Yen-Ming CHEN

IPC分类号： H01L29/78 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/267 ,  H01L29/167 ,  H01L23/535 ,  H01L21/8238 ,  H01L29/66

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a first fin structure and a second fin structure extended above a substrate, and a first source/drain structure formed over the first fin structure. The first source/drain structure is made of an N-type conductivity material. The semiconductor device structure also includes a second source/drain structure formed over the second fin structure, and the second source/drain structure is made of an P-type conductivity material The semiconductor device structure also includes a cap layer formed over the first source/drain structure, wherein the cap layer is made of P-type conductivity material.