- 专利标题： METHODS OF FORMING CONTACT FEATURES IN FIELD-EFFECT TRANSISTORS
-
申请号： US18770865申请日： 2024-07-12
-
公开(公告)号： US20240363757A1公开(公告)日： 2024-10-31
- 发明人: Li-Zhen Yu , Jia-Chuan You , Chia-Hao Chang , Tien-Lu Lin , Yu-Ming Lin , Chih-Hao Wang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 分案原申请号： US16514736 2019.07.17
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/02 ; H01L27/088 ; H01L29/66
摘要：
A method includes providing a semiconductor structure having metal gate structures (MGs), gate spacers disposed on sidewalls of the MGs, and source/drain (S/D) features disposed adjacent to the gate spacers; forming a first dielectric layer over the MGs and forming S/D contacts (MDs) over the S/D features; forming a second dielectric layer over the first dielectric layer, where portions of the second dielectric layer contact the MDs and the second dielectric layer is different from the first dielectric layer in composition; removing the portions of the second dielectric layer that contact the MDs; forming a conductive layer over the MDs and over the first dielectric layer; and removing portions of the conductive layer to form conductive features over the MDs.
信息查询
IPC分类:
