Apparatus and methods for back side routing a data signal in a semiconductor device are described. In one example, a described semiconductor cell structure includes: a dummy device region at a front side of the semiconductor cell structure; a metal layer including a plurality of metal lines at a back side of the semiconductor cell structure; a dielectric layer formed between the dummy device region and the metal layer; an inner metal disposed within the dielectric layer; at least one first via that is formed through the dielectric layer and electrically connects the inner metal to the plurality of metal lines at the back side; and at least one second via that is formed in the dielectric layer and physically coupled between the inner metal and the dummy device region at the front side.