Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US18777194Application Date: 2024-07-18
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Publication No.: US20240379574A1Publication Date: 2024-11-14
- Inventor: Yoshizo OSUMI , Taro NISHIOKA
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto-shi, Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto-shi, Kyoto
- Priority: JP2022-007105 20220120
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/00 ; H01L23/495 ; H01L23/64 ; H01L25/065

Abstract:
A semiconductor device is configured to suppress an occurrence of dielectric breakdown in the semiconductor device. The semiconductor device includes an insulating element, a conductive member on which the insulating element is mounted, and a sealing resin covering the insulating element. The conductive member includes an uneven part covered by the sealing resin. As an example, in the semiconductor device, the conductive member includes a first die pad on which the insulating element is mounted, and the uneven part includes a first region that is provided on the first die pad.
Information query
IPC分类: