公开(公告)号：US20240304510A1

公开(公告)日：2024-09-12

申请号：US18660967

申请日：2024-05-10

Applicant: Rohm Co., Ltd.

Inventor： Hiroaki MATSUBARA ,  Taro NISHIOKA ,  Yoshizo OSUMI

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/29 ,  H01L23/498 ,  H01L23/522 ,  H01L25/18

CPC classification number: H01L23/3135 ,  H01L23/291 ,  H01L23/49838 ,  H01L23/5223 ,  H01L23/5227 ,  H01L24/48 ,  H01L24/49 ,  H01L25/18 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2924/1815

Abstract: A semiconductor device includes: a first semiconductor element; a second semiconductor element; an insulating element electrically connected to the first semiconductor element and the second semiconductor element, and insulating the first semiconductor element and the second semiconductor element from each other; and a sealing resin covering the first semiconductor element, the second semiconductor element, and the insulating element. The sealing resin includes a first portion covering the first semiconductor element, the second semiconductor element, and the insulating element, and a second portion constituting the outermost surface of the sealing resin. The second portion is less prone to a tracking phenomenon than the first portion.

公开(公告)号：US20240274743A1

公开(公告)日：2024-08-15

申请号：US18630525

申请日：2024-04-09

Applicant: Rohm Co., Ltd.

Inventor： Hiroaki MATSUBARA ,  Yoshizo OSUMI

IPC: H01L31/16 ,  H01L33/56 ,  H01L33/62

CPC classification number: H01L31/162 ,  H01L33/56 ,  H01L33/62

Abstract: A semiconductor device includes a first die pad, a light-receiving element, a light-emitting element, a first sheet, and a resin part. The first die pad has a first obverse surface facing a first side in a thickness direction. The light-receiving element is mounted on the first obverse surface. The light-emitting element is disposed on the first side in the thickness direction with respect to the light-receiving element. The first sheet has light-passing and insulating properties and is interposed between the light-receiving element and the light-emitting element in the thickness direction. The resin part covers the light-receiving element, the light-emitting element and the first sheet. The first sheet includes a first surface facing the first side in the thickness direction and a second surface facing away from the first surface. At least a portion of the first surface and the second surface includes an uneven portion with irregularities.

公开(公告)号：US20240194660A1

公开(公告)日：2024-06-13

申请号：US18587461

申请日：2024-02-26

Applicant: ROHM CO., LTD.

Inventor： Yoshizo OSUMI ,  Taro NISHIOKA ,  Hiroaki MATSUBARA

IPC: H01L25/16 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/18 ,  H01L33/56 ,  H01L33/62

CPC classification number: H01L25/167 ,  H01L31/02005 ,  H01L31/0203 ,  H01L33/56 ,  H01L33/62 ,  H01L31/18 ,  H01L2933/005 ,  H01L2933/0066

Abstract: Semiconductor device includes first lead, second lead, light-emitting element, light-receiving element, transparent resin and first resin. First lead includes first die pad having first obverse surface and first reverse surface mutually opposite in thickness direction. Second lead includes second die pad having second obverse surface facing same side as first obverse surface in thickness direction and second reverse surface facing same side as first reverse surface in thickness direction. Light-emitting element is mounted on first obverse surface. Light-receiving element is mounted on second obverse surface. Transparent resin covers portions of light-emitting element and light-receiving element. First resin covers transparent resin. Transparent resin includes transparent-resin obverse surface facing same side as first obverse surface in thickness direction, and transparent-resin reverse surface facing same side as first reverse surface in thickness direction. Transparent-resin reverse surface has surface roughness larger than that of transparent-resin obverse surface.

公开(公告)号：US20240312877A1

公开(公告)日：2024-09-19

申请号：US18670165

申请日：2024-05-21

Applicant: Rohm Co., Ltd.

Inventor： Yoshizo OSUMI ,  Keiji WADA

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49506 ,  H01L23/3107 ,  H01L23/49575 ,  H01L24/48 ,  H01L2224/48137 ,  H01L2224/48245 ,  H01L2924/1206 ,  H01L2924/1426

Abstract: A semiconductor device includes a die pad, a first semiconductor element and a second semiconductor element each mounted on the die pad, and an insulating element electrically connected to the first semiconductor element and the second semiconductor element and insulating the first semiconductor element and the second semiconductor element from each other. The semiconductor device further includes a dummy element bonded to the die pad and a first bonding layer bonding the dummy element and the insulating element. The dummy element includes an insulating layer located between the die pad and the first bonding layer in a thickness direction.

公开(公告)号：US20240047438A1

公开(公告)日：2024-02-08

申请号：US18267455

申请日：2021-11-22

Applicant: ROHM CO., LTD.

Inventor： Hiroaki MATSUBARA ,  Taro NISHIOKA ,  Yoshizo OSUMI ,  Tomohira KIKUCHI ,  Moe YAMAGUCHI ,  Ryohei UMENO

IPC: H01L25/16 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00

CPC classification number: H01L25/16 ,  H01L23/3107 ,  H01L23/49579 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/46 ,  H01L2224/48195 ,  H01L2224/48245 ,  H01L2224/48991 ,  H01L2224/48455 ,  H01L2924/19042 ,  H01L2924/3512

Abstract: A semiconductor device includes first and second semiconductor elements, and first and second circuits at different potentials. The second semiconductor element, electrically connected to the first semiconductor element, relays mutual signals between the first and the second circuits, while insulating them. The semiconductor device further includes a first terminal lead electrically connected to the first semiconductor element, a first wire connected to the first and the second semiconductor elements, and a second wire connected to the first semiconductor element and the first terminal lead. The first wire contains a first metal. The second wire includes a first core containing a second metal, and a first surface layer containing a third metal and covering the first core. The second metal has a smaller atomic number than that of the first metal. The third metal has a greater bonding strength with respect to the first terminal lead than the second metal.

公开(公告)号：US20230335529A1

公开(公告)日：2023-10-19

申请号：US18340346

申请日：2023-06-23

Applicant: ROHM CO., LTD.

Inventor： Ryohei UMENO ,  Taro NISHIOKA ,  Hiroaki MATSUBARA ,  Yoshizo OSUMI ,  Tomohira KIKUCHI ,  Moe YAMAGUCHI

IPC: H01L23/00 ,  H01L23/495 ,  H01L23/31

CPC classification number: H01L24/48 ,  H01L23/49562 ,  H01L23/4952 ,  H01L23/3107 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/48137 ,  H01L2924/13091 ,  H01L2924/13055 ,  H01L2224/32245 ,  H01L2224/73265

Abstract: A semiconductor device includes: a semiconductor element; an island lead on which the semiconductor element is mounted; a terminal lead electrically connected to the semiconductor element; a wire connected to the semiconductor element and the terminal lead; and a sealing resin covering the semiconductor element, the island lead, the terminal lead, and the wire. The terminal lead includes a base member having an obverse surface facing in a thickness direction of the terminal lead, and a metal layer located between the obverse surface and the wire. The base member has a greater bonding strength with respect to the sealing resin than the metal layer. The obverse surface includes an opposing side facing the island lead. The obverse surface includes a first portion that includes at least a portion of the opposing side and that is exposed from the metal layer.

公开(公告)号：US20220068776A1

公开(公告)日：2022-03-03

申请号：US17454576

申请日：2021-11-11

Applicant: ROHM CO., LTD.

Inventor： Yoshizo OSUMI ,  Taro NISHIOKA ,  Tomohira KIKUCHI ,  Tsunehisa ONO

IPC: H01L23/495 ,  H01L25/07 ,  H01L25/065 ,  H01L23/00

Abstract: A semiconductor device includes a first semiconductor chip and a second semiconductor chip to which different power-supply voltages are supplied, connection bonding wires connecting the first semiconductor chip and the second semiconductor chip to each other, and a sealing resin provided to fill a gap between a first lead frame on which the first semiconductor chip is mounted and a second lead frame on which the second semiconductor chip is mounted so as to cover the respective circumferences of the first semiconductor chip and the second semiconductor chip. The respective surfaces of the first lead frame and the second lead frame in the regions opposed to each other are covered with an insulating protection film including a material having higher electrical breakdown voltage than a material included in the sealing resin.

公开(公告)号：US20240363606A1

公开(公告)日：2024-10-31

申请号：US18768925

申请日：2024-07-10

Applicant: ROHM CO., LTD.

Inventor： Yoshizo OSUMI ,  Tsunehisa ONO

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  H01L23/64

CPC classification number: H01L25/16 ,  H01L23/3107 ,  H01L23/49558 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48195 ,  H01L2224/48245 ,  H01L2924/1426 ,  H01L2924/19042 ,  H01L2924/19043

Abstract: The semiconductor device includes an insulating element, a conductive member, a sealing resin, and a discharge path. The conductive member includes a first terminal and a second terminal that are electrically connected to the insulating element. The sealing resin includes a resin first surface and a resin second surface. The first terminal protrudes from the resin first surface. The resin second surface faces away from the resin first surface in a first direction perpendicular to a thickness direction of the insulating element. The second terminal protrudes from the resin second surface. The discharge path is a conductive path between the first terminal and the second terminal, and is electrically conductive at a voltage lower than a dielectric withstand voltage of the insulating element.

公开(公告)号：US20240112995A1

公开(公告)日：2024-04-04

申请号：US18256150

申请日：2021-11-29

Applicant: ROHM CO., LTD.

Inventor： Moe YAMAGUCHI ,  Hiroaki MATSUBARA ,  Yoshizo OSUMI ,  Tomohira KIKUCHI ,  Ryohei UMENO ,  Taro NISHIOKA

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49575 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49517 ,  H01L23/49558 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2224/73265

Abstract: A semiconductor device includes a first die pad with a first obverse surface facing in z direction, a second die pad spaced from the first die pad and including a second obverse surface facing in z direction, a first semiconductor element on the first obverse surface, a second semiconductor element on the second obverse surface, an insulating element on the first or second obverse surface and located between the first and second semiconductor elements in x direction to relay signals between the first and second semiconductor elements while electrically insulating these semiconductor elements, and a wire bonded to the first semiconductor element and the first obverse surface. The first die pad includes a first bond portion bonded to the wire, and a first opening located between the first bond portion and the first semiconductor element in y direction and including an opening end in the first obverse surface.

公开(公告)号：US20240030212A1

公开(公告)日：2024-01-25

申请号：US18352759

申请日：2023-07-14

Applicant: ROHM CO., LTD.

Inventor： Tomohira KIKUCHI ,  Hiroaki MATSUBARA ,  Yoshizo OSUMI ,  Moe YAMAGUCHI ,  Ryohei UMENO

IPC: H01L25/18 ,  H01L23/495 ,  H01L25/16 ,  H01L23/31

CPC classification number: H01L25/18 ,  H01L23/49575 ,  H01L25/16 ,  H01L23/3121 ,  H01L23/49555 ,  H01L24/48

Abstract: A semiconductor device includes a semiconductor control element, a first drive element, a second drive element and a first insulating element. The first drive element is spaced apart from the semiconductor control element in a first direction orthogonal to a thickness direction of the semiconductor control element and receives a signal transmitted from the semiconductor control element. The second drive element is spaced apart from the first drive element in a second direction orthogonal to the thickness direction and the first direction and receives a signal transmitted from the semiconductor control element. The first insulating element is located between the semiconductor control element and the first drive element in the first direction. The first insulating element relays a signal transmitted from the semiconductor control element to the first drive element and provides electrical insulation between the semiconductor control element and the first drive element.