Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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Application No.: US18436574Application Date: 2024-02-08
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Publication No.: US20240414925A1Publication Date: 2024-12-12
- Inventor: Seunghee Lee , Jin-Seong Park , Jihyun Kho , Dong-Gyu Kim , Yurim Kim , Yong-Suk Tak
- Applicant: SAMSUNG ELECTRONICS CO., LTD. , IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Applicant Address: KR Suwon-si; KR Seoul
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Current Assignee Address: KR Suwon-si; KR Seoul
- Priority: KR10-2023-0072772 20230607
- Main IPC: H10B53/20
- IPC: H10B53/20 ; H01L21/28 ; H01L23/528 ; H01L29/51 ; H01L29/66 ; H01L29/78 ; H10B51/10 ; H10B51/20 ; H10B53/10
Abstract:
A semiconductor device has, in a gate insulating layer, in an XPS spectrum of O 1s obtained by an X-ray photoelectron spectroscopy (XPS) using a monochromatic aluminum Kα (1486.6 eV) source, a ratio (%) of an Al—O peak observed in a binding energy of about 530.3 eV to about 531.6 eV to all peaks of greater than or equal to about 80%.
Information query
