Invention Application
- Patent Title: CIRCUIT LAYOUTS WITH STAGGERED GATE AND SOURCE/DRAIN REGIONS
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Application No.: US18333953Application Date: 2023-06-13
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Publication No.: US20240421145A1Publication Date: 2024-12-19
- Inventor: Carl Radens , Brent A. Anderson , Albert M. Chu , Ruilong Xie
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H10B10/00

Abstract:
A semiconductor structure includes a first circuit row including one or more first circuit cells and a second circuit row including one or more second circuit cells. At a cell boundary between the one or more first circuit cells in the first circuit row and the one or more second circuit cells in the second circuit row, one or more first gate regions of the one or more first circuit cells in the first circuit row are staggered with one or more second gate regions of the one or more second circuit cells in the second circuit row.
Information query
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