Invention Application
- Patent Title: LOW REVERSE LEAKAGE CURRENT POWER SCHOTTKY DIODES HAVING REDUCED CURRENT CROWDING AT THE LOWER BLOCKING JUNCTION CORNERS
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Application No.: US18340418Application Date: 2023-06-23
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Publication No.: US20240429323A1Publication Date: 2024-12-26
- Inventor: Jae-Hyung Park , In-Hwan Ji , Daniel J. Lichtenwalner , Edward Robert Van Brunt
- Applicant: Wolfspeed, Inc.
- Applicant Address: US NC Durham
- Assignee: Wolfspeed, Inc.
- Current Assignee: Wolfspeed, Inc.
- Current Assignee Address: US NC Durham
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/16 ; H01L29/36
Abstract:
A Schottky diode includes a semiconductor layer structure that is interposed between first and second contacts. The semiconductor layer structure comprises a current spreading layer having a first conductivity type, a drift region between the second contact and the current spreading layer, the drift region having the first conductivity type, and a first blocking junction having a second conductivity type that is opposite the first conductivity type, the first blocking junction extending downwardly from an upper surface of the semiconductor layer structure. The current spreading layer has a first conductivity type dopant concentration that is at least 1.5 times greater than a first conductivity type dopant concentration of the drift region and the current spreading layer vertically overlaps at least a portion of a lower half of the first blocking junction.
Information query
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