公开(公告)号：US12218202B2

公开(公告)日：2025-02-04

申请号：US17477004

申请日：2021-09-16

Applicant: Wolfspeed, Inc.

Inventor： Evan Jones ,  Saptha Sriram ,  Kyle Bothe

IPC: H01L29/778 ,  H01L29/10

Abstract: A semiconductor device includes a substrate having an upper surface including a recess region, a semiconductor structure on the substrate, a portion of the semiconductor structure within the recess region, and a gate contact, a drain contact, and a source contact on the semiconductor structure. The recess region does not vertically overlap the drain contact or the source contact.

公开(公告)号：US20250040030A1

公开(公告)日：2025-01-30

申请号：US18782438

申请日：2024-07-24

Applicant: Wolfspeed, Inc.

Inventor： Gérard Bouisse

IPC: H05K1/02

Abstract: Multilayer printed circuit boards are provided. In one example, a multilayer printed circuit board includes at least one metallization layer. The multilayer printed circuit board includes an insulating layer. The multilayer printed circuit board includes an insulating layer. The at least one metallization layer includes a plurality of filling segment structures such that the at least one metallization layer has a metal density of at least about 35%.

公开(公告)号：US20250038056A1

公开(公告)日：2025-01-30

申请号：US18419128

申请日：2024-01-22

Applicant: Wolfspeed, Inc.

Inventor： Afshin Dadvand ,  Yusheng Lin

IPC: H01L23/13 ,  H01L23/00

Abstract: Semiconductor packages are provided. In one example, the semiconductor package includes a submount. The semiconductor package further includes a recess in the submount. The recess includes a bottom surface defining a recess plane. The recess further includes at least one stud protrusion extending from the recess plane. The semiconductor package further includes a semiconductor die on the at least one stud protrusion.

公开(公告)号：US20250038055A1

公开(公告)日：2025-01-30

申请号：US18358616

申请日：2023-07-25

Applicant: Wolfspeed, Inc.

Inventor： Afshin Dadvand ,  Devarajan Balaraman

IPC: H01L23/13 ,  H01L23/00 ,  H01L23/495

Abstract: Semiconductor packages are provided. In one example, a semiconductor package includes a submount. The semiconductor package further includes a semiconductor die on the submount. The submount defines a base plane, and the submount includes at least one stud protrusion extending from the base plane in a direction toward the semiconductor die.

公开(公告)号：US12199071B2

公开(公告)日：2025-01-14

申请号：US18429629

申请日：2024-02-01

Applicant: Wolfspeed, Inc.

Inventor： Brice McPherson ,  Shashwat Singh ,  Roberto M. Schupbach

IPC: H01L25/07 ,  H01L23/498 ,  H02M7/00 ,  H01L23/00 ,  H01L23/34 ,  H02M7/5387

Abstract: A power module is provided with a substrate, power devices, and a housing. The power devices are mounted on device pads of the substrate and arranged to provide a power circuit having a first input, a second input, and at least one output. First and second power terminals provide first and second inputs for the power circuit. At least one output power terminal provides at least one output. The housing encompasses the substrate, the power devices, and portions of the first and second input power terminals as well as the at least one output power terminal. The first and second input power terminals extend out of a first side of the housing, and the at least one output power terminal extends out of a second side of the housing, the first side being opposite the second side.

公开(公告)号：US20250006491A1

公开(公告)日：2025-01-02

申请号：US18828024

申请日：2024-09-09

Applicant: Wolfspeed, Inc.

Inventor： Yuri Khlebnikov ,  Varad R. Sakhalkar ,  Caleb A. Kent ,  Valeri F. Tsvetkov ,  Michael J. Paisley ,  Oleksandr Kramarenko ,  Matthew David Conrad ,  Eugene Deyneka ,  Steven Griffiths ,  Simon Bubel ,  Adrian R. Powell ,  Robert Tyler Leonard ,  Elif Balkas ,  Curt Progl ,  Michael Fusco ,  Alexander Shveyd ,  Kathy Doverspike ,  Lukas Nattermann

IPC: H01L21/02 ,  C30B23/00 ,  C30B23/02 ,  C30B29/36

Abstract: Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.

公开(公告)号：US20240429323A1

公开(公告)日：2024-12-26

申请号：US18340418

申请日：2023-06-23

Applicant: Wolfspeed, Inc.

Inventor： Jae-Hyung Park ,  In-Hwan Ji ,  Daniel J. Lichtenwalner ,  Edward Robert Van Brunt

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/36

Abstract: A Schottky diode includes a semiconductor layer structure that is interposed between first and second contacts. The semiconductor layer structure comprises a current spreading layer having a first conductivity type, a drift region between the second contact and the current spreading layer, the drift region having the first conductivity type, and a first blocking junction having a second conductivity type that is opposite the first conductivity type, the first blocking junction extending downwardly from an upper surface of the semiconductor layer structure. The current spreading layer has a first conductivity type dopant concentration that is at least 1.5 times greater than a first conductivity type dopant concentration of the drift region and the current spreading layer vertically overlaps at least a portion of a lower half of the first blocking junction.

公开(公告)号：US12176423B2

公开(公告)日：2024-12-24

申请号：US17108505

申请日：2020-12-01

Applicant: Wolfspeed, Inc.

Inventor： Naeem Islam ,  Woongsun Kim ,  Daniel Jenner Lichtenwalner ,  Sei-Hyung Ryu

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78

Abstract: A power semiconductor device includes a semiconductor layer structure comprising a wide bandgap semiconductor material. The semiconductor layer structure includes a drift region of a first conductivity type and a plurality of fin structures protruding from the drift region. The fin structures comprise respective source regions of the first conductivity type and respective channel regions between the respective source regions and the drift region. Related devices and methods are also discussed.

公开(公告)号：US20240421029A1

公开(公告)日：2024-12-19

申请号：US18336358

申请日：2023-06-16

Applicant: Wolfspeed, Inc.

Inventor： Devarajan Balaraman ,  Daniel Ginn Richter

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/07 ,  H01L29/66 ,  H01L29/872

Abstract: Semiconductor packages are provided. In one example, a semiconductor package includes a submount having a first surface and a second surface opposing the first surface. The semiconductor package includes at least one semiconductor die attached to the second surface of submount. The semiconductor package includes an insulating portion on the second surface of the submount and on the at least one semiconductor die. The insulating portion forms a first external surface of the semiconductor package. The semiconductor package includes at least one through-mold via extending from the first external surface through the insulating portion to at least one of the semiconductor die or the submount.

公开(公告)号：US20240341026A1

公开(公告)日：2024-10-10

申请号：US18296461

申请日：2023-04-06

Applicant: WOLFSPEED, INC.

Inventor： Haedong JANG ,  Marvin MARBELL ,  Jeremy FISHER

IPC: H05K1/02 ,  H05K1/11 ,  H05K1/18

CPC classification number: H05K1/0201 ,  H05K1/116 ,  H05K1/181 ,  H01L25/162 ,  H05K2201/0326 ,  H05K2201/066 ,  H05K2201/10015

Abstract: A component includes a substrate board; a thermal bridge structured and arranged on the substrate board, where the thermal bridge is configured to transfer heat from the substrate board including an area adjacent to or on a hotspot of the substrate board; where the thermal bridge is configured to transfer the heat to another location on the substrate board for removal of the heat from the substrate board; and where the thermal bridge may include silicon carbide.