A structure includes a semiconductor substrate; a plurality of first dielectric layers at a top side of the substrate; an active device layer at a top side of the first layers; a plurality of second dielectric layers at a top side of the device layer; first and second sense pads; and a metal body that electrically connects the pads. The metal body includes a first portion that is embedded in the first layers, made of a first plurality of discrete segments; a second portion that is embedded in the second layers, made of a second plurality of discrete segments, of which a first is electrically connected to the first pad and a second is electrically connected to the second pad; and a plurality of vias that interconnect the first and second portions. Breaking any of the vias reduces the electrical connectivity between the pads.