Invention Application
- Patent Title: SUBSTRATE WITH ß-GALLIUM OXIDE FILM AND PRODUCTION METHOD THEREFOR
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Application No.: US18894828Application Date: 2024-09-24
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Publication No.: US20250015144A1Publication Date: 2025-01-09
- Inventor: Masaru HORI , Osamu ODA , Arun Kumar DHASIYAN , Atsushi HAYASHI , Nobutaka AOMINE
- Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM , AGC Inc.
- Applicant Address: JP Nagoya-shi; JP Tokyo
- Assignee: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM,AGC Inc.
- Current Assignee: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM,AGC Inc.
- Current Assignee Address: JP Nagoya-shi; JP Tokyo
- Priority: JP2022-050538 20220325,JP2022-075480 20220428
- Main IPC: H01L29/26
- IPC: H01L29/26 ; C30B25/10 ; C30B25/18 ; C30B29/06 ; C30B29/16 ; H01L21/02
Abstract:
A substrate with a β-gallium oxide film includes a Si single crystal substrate and a β-gallium oxide film provided on the Si single crystal substrate. A substrate with a β-gallium oxide film includes a gallium nitride single crystal substrate and a β-gallium oxide film provided on the gallium nitride single crystal substrate.
Information query
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