Invention Application
- Patent Title: MEMORY SELF-REFRESH POWER GATING
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Application No.: US18783900Application Date: 2024-07-25
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Publication No.: US20250037750A1Publication Date: 2025-01-30
- Inventor: Indrani Paul , Benjamin Tsien , James R. Magro
- Applicant: Advanced Micro Devices, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: G11C11/4074
- IPC: G11C11/4074 ; G11C5/14 ; G11C11/406

Abstract:
The disclosed systems and methods include a control circuit for entering a low power state of a memory by preserving a context of the memory's controller and power gating the memory's physical layer. The context can be saved to a non-volatile memory device or by keeping a retention supply voltage to a register of the memory controller. Various other methods, systems, and computer-readable media are also disclosed.
Information query
IPC分类: