Invention Application
- Patent Title: Stacked FET With Local Contact
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Application No.: US18453285Application Date: 2023-08-21
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Publication No.: US20250072113A1Publication Date: 2025-02-27
- Inventor: Ruilong Xie , James P. Mazza , Shahrukh Khan , Iqbal Rashid Saraf , Biswanath Senapati , Tenko Yamashita
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY ARMONK
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY ARMONK
- Main IPC: H01L27/12
- IPC: H01L27/12

Abstract:
A semiconductor device includes a first source/drain region, a first contact over the first source/drain region, a second source/drain region, and a lateral contact connecting the second source/drain region to a back end of line (BEOL). Portions of the first contact are recessed, and the lateral contact overlaps with the recessed portions of the first contact. The first source/drain region is formed over the second source/drain region.
Information query
IPC分类: