Invention Application
- Patent Title: Semiconductor Device and Method of Manufacture
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Application No.: US18939947Application Date: 2024-11-07
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Publication No.: US20250087641A1Publication Date: 2025-03-13
- Inventor: Jiun Yi Wu , Chen-Hua Yu , Chung-Shi Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L21/56 ; H01L23/00 ; H01L23/538

Abstract:
A structure includes core substrates attached to a first side of a redistribution structure, wherein the redistribution structure includes first conductive features and first dielectric layers, wherein each core substrate includes conductive pillars, wherein the conductive pillars of the core substrates physically and electrically contact first conductive features; an encapsulant extending over the first side of the redistribution structure, wherein the encapsulant extends along sidewalls of each core substrate; and an integrated device package connected to a second side of the redistribution structure.
Information query
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