Disclosed is a composite structure having low-particle generation usable for a member for a semiconductor manufacturing apparatus and also the semiconductor manufacturing apparatus. The composite structure including a base material and a structure that is provided on the base material wherein the structure comprises Y2O3—ZrO2 solid solution (YZrO) as a main component, and lattice constant of the YZrO is 5.252 Å or greater or has an indentation hardness of more than 12 GPa. has low-particle generation and is suitably used as a member for a semiconductor apparatus.