公开(公告)号：US20240166567A1

公开(公告)日：2024-05-23

申请号：US18282857

申请日：2022-03-17

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Ryoto TAKIZAWA

IPC: C04B35/44 ,  C23C24/04

CPC classification number: C04B35/44 ,  C04B2235/3218 ,  C04B2235/781 ,  C23C24/04

Abstract: Disclosed are a composite structure, which is able to enhance low-particle generation so that this can be used as a member for a semiconductor manufacturing device, and a semiconductor manufacturing device provided with the composite structure. The composite structure has a substrate and a structure that is provided on the substrate and has a surface, in which the structure contains Y4Al2O9 as a main component, and an indentation hardness thereof is greater than 6.0 GPa, thereby having excellent low-particle generation, so that this may be suitably used as a member for a semiconductor manufacturing device.

公开(公告)号：US20210340066A1

公开(公告)日：2021-11-04

申请号：US17244247

申请日：2021-04-29

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Ryoto TAKIZAWA

IPC: C04B35/44

Abstract: Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises Y3Al5O12 as a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.

公开(公告)号：US20240170264A1

公开(公告)日：2024-05-23

申请号：US18282839

申请日：2022-03-17

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Ryoto TAKIZAWA

IPC: H01J37/32 ,  C04B35/44

CPC classification number: H01J37/32467 ,  C04B35/44 ,  H01J37/32495 ,  C04B2235/761

Abstract: Disclosed are a member for a semiconductor manufacturing device and a semiconductor manufacturing device that can enhance low-particle generation. The composite structure having a substrate and a structure which is provided on the substrate and has a surface exposed to a plasma environment, in which the structure contains Y4Al2O9 as a main component, and lattice constants and/or intensity ratio of specific X-ray diffraction peak meet specific conditions, has excellent low-particle generation so that this may be suitably used as a member for a semiconductor manufacturing device.

公开(公告)号：US20250101597A1

公开(公告)日：2025-03-27

申请号：US18730081

申请日：2023-02-13

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Ryoto TAKIZAWA

IPC: C23C24/04 ,  H01J37/32

Abstract: Disclosed is a composite structure having low-particle generation usable for a member for a semiconductor manufacturing apparatus and also the semiconductor manufacturing apparatus. The composite structure including a base material and a structure that is provided on the base material wherein the structure comprises Y2O3—ZrO2 solid solution (YZrO) as a main component, and lattice constant of the YZrO is 5.252 Å or greater or has an indentation hardness of more than 12 GPa. has low-particle generation and is suitably used as a member for a semiconductor apparatus.

公开(公告)号：US20250079131A1

公开(公告)日：2025-03-06

申请号：US18819886

申请日：2024-08-29

Applicant: TOTO LTD.

Inventor： Yasutaka NITTA ,  Ryoto TAKIZAWA ,  Susumu ADACHI ,  Atsushi KINJO ,  Tatsuya KOGA

IPC: H01J37/32

Abstract: A structural member 10 includes a base material 100 and a protective film 200 covering a surface 101 of the base material 100. At least a portion of the protective film 200 in the vicinity of a surface 201 thereof has a first layer 210 and a second layer 220 that contains all of elements contained in the first layer 210 and that is different from the first layer 210 in composition ratio of each element, wherein the first layer 210 and the second layer 220 are alternately aligned along a depth direction perpendicular to the surface 201 of the protective film 200.

公开(公告)号：US20240331982A1

公开(公告)日：2024-10-03

申请号：US18738213

申请日：2024-06-10

Applicant: TOTO LTD.

Inventor： Yasutaka NITTA ,  Takuma WADA ,  Ryoto TAKIZAWA

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32477 ,  C23C16/4583 ,  H01J37/32715 ,  H01L21/67011 ,  H01L21/6831 ,  H01J2237/2007

Abstract: According to one embodiment, a semiconductor manufacturing apparatus member includes a base and a particle-resistant layer. The base includes a first surface, a second surface crossing the first surface, and an edge portion connecting the first surface and the second surface. The particle-resistant layer includes a polycrystalline ceramic and covering the first surface, the second surface, and the edge portion. The particle-resistant layer includes a first particle-resistant layer provided at the edge portion, and a second particle-resistant layer provided at the first surface. A particle resistance of the first particle-resistant layer is higher than a particle resistance of the second particle-resistant layer. A thickness of the first particle-resistant layer is thinner than a thickness of the second particle-resistant layer.

公开(公告)号：US20210343511A1

公开(公告)日：2021-11-04

申请号：US17244299

申请日：2021-04-29

Applicant: TOTO LTD.

Inventor： Hiroaki ASHIZAWA ,  Ryoto TAKIZAWA

IPC: H01J37/32 ,  H01L21/67

Abstract: Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus as well as a semiconductor manufacturing apparatus. A composite structure including a base material and a structure that is provided on the base material and has a surface to be exposed to a plasma atmosphere, in which the structure has an yttrium-aluminum oxide as a main component, and has a lattice constant a calculated by the following formula (1) being larger than 12.080 Å: a=d·(h2+k2+l2)1/2  (1) where d represents a lattice plane spacing, and (hkl) represents a Miller index. This structure features excellent low-particle generation and is suitably used a member for a semiconductor apparatus.

公开(公告)号：US20200273675A1

公开(公告)日：2020-08-27

申请号：US16802666

申请日：2020-02-27

Applicant: TOTO LTD.

Inventor： Yasutaka NITTA ,  Takuma WADA ,  Ryoto TAKIZAWA

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  C23C16/458

Abstract: According to one embodiment, a semiconductor manufacturing apparatus member includes a base and a particle-resistant layer. The base includes a first surface, a second surface crossing the first surface, and an edge portion connecting the first surface and the second surface. The particle-resistant layer includes a polycrystalline ceramic and covering the first surface, the second surface, and the edge portion. The particle-resistant layer includes a first particle-resistant layer provided at the edge portion, and a second particle-resistant layer provided at the first surface. A particle resistance of the first particle-resistant layer is higher than a particle resistance of the second particle-resistant layer.

公开(公告)号：US20190276368A1

公开(公告)日：2019-09-12

申请号：US16296934

申请日：2019-03-08

Applicant: TOTO LTD.

Inventor： Junichi IWASAWA ,  Hiroaki ASHIZAWA ,  Takuma WADA ,  Ryoto TAKIZAWA ,  Toshihiro AOSHIMA ,  Yuuki TAKAHASHI ,  Atsushi KINJO

IPC: C04B35/505 ,  H01L21/67 ,  C01F17/00 ,  C01B11/24 ,  C01F7/02 ,  C01G25/02 ,  C04B35/622 ,  H01J37/28

Abstract: Disclosed is provision of a ceramic coat having an excellent low-particle generation as well as a method for assessing the low-particle generation of the ceramic coat. A composite structure including a substrate and a structure which is formed on the substrate and has a surface, wherein the structure includes a polycrystalline ceramic and the composite structure has luminance Sa satisfying a specific value calculated from a TEM image analysis thereof, can be suitably used as an inner member of a semiconductor manufacturing apparatus required to have a low-particle generation.