Invention Grant
- Patent Title: Formation of semiconductor devices
- Patent Title (中): 形成半导体器件
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Application No.: US3580460Application Date: 1960-06-13
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Publication No.: US3100166APublication Date: 1963-08-06
- Inventor: MARINACE JOHN C , RUTZ RICHARD F
- Applicant: IBM
- Assignee: Ibm
- Current Assignee: Ibm
- Priority: US3580460 1960-06-13; US81657259 1959-05-28; US81657359 1959-05-28; US86331859 1959-12-31
- Main IPC: C22B41/00
- IPC: C22B41/00 ; C23C16/46 ; C25F3/12 ; C30B25/02 ; H01L21/00 ; H01L21/205 ; H01L29/00
Abstract:
891,572. Coating with metals. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 12, 1960 [May 28, 1959], No. 16840/60. Class 82(2). [Also in Group XXXVI] A P type monocrystalline germanium wafer shaped as described in Group XXXVI is placed in a sealed chamber 17 with finely divided 0À01 ohm. cm. phosphorus doped N type germanium 18 and germanium iodide as a carrier gas. The finely divided germanium source 18 is maintained at 550‹C., the wafer at 400‹C, and the rest of the chamber at 410‹C. for 48 hours during which the germanium is transported from source 18 and deposited epitaxially at 7 on the wafer.
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