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    METHOD FOR PREPARING SILICON AND/OR GERMANIUM NANOWIRES
    1.
    发明申请
    METHOD FOR PREPARING SILICON AND/OR GERMANIUM NANOWIRES 审中-公开

    公开(公告)号：US20190047870A1

    公开(公告)日：2019-02-14

    申请号：US16079936

    申请日：2017-02-28

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

    发明人： Pascale Chenevier ,  Peter Reiss

    IPC分类号： C01B33/021 ,  C22B41/00 ,  H01M4/134 ,  H01M4/38 ,  H01G11/50

    摘要： The invention relates to a method for preparing a material made of silicon and/or germanium nanowires, comprising the steps of: i) placing a source of silicon and/or a source of germanium in contact with a catalyst comprising a binary metal sulfide or a multinary metal sulfide, said metal(s) being selected from among Sn, In, Bi, Sb, Ga, Ti, Cu, and Zn, by means of which silicon and/or germanium nanowires are obtained, ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i); the catalyst and, optionally, the source of silicon and/or the source of germanium being heated before, during and/or after being placed in contact under temperature and pressure conditions that allow the growth of the silicon and/or germanium nanowires.

    CRYSTAL MANUFACTURING
    3.
    发明申请
    CRYSTAL MANUFACTURING 有权
    水晶制造

    公开(公告)号：US20120217446A1

    公开(公告)日：2012-08-30

    申请号：US13416998

    申请日：2012-03-09

    申请人： Olli ANTTILA ,  Ari Saarnikko ,  Jari Paloheimo

    发明人： Olli ANTTILA ,  Ari Saarnikko ,  Jari Paloheimo

    IPC分类号： H01B1/00 ,  C01B33/02 ,  C22B41/00 ,  C30B15/14

    CPC分类号： C30B15/14 ,  C30B29/20 ,  Y10T117/10 ,  Y10T117/104 ,  Y10T117/1056 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

    摘要： An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.

    摘要翻译： 已经显示和体现了切克劳斯基型晶体生长的实现。 更具体地，示出了具有合适的绝缘和流动布置的炉子，以提高晶体生产的成本效率。 这是通过所示的新的热区结构，气体流动和生长过程来实现的，其可以降低功率消耗，增加热区部件的寿命并提高生产率，例如通过提供用于打开热区的装置， 容易使热区适应新的晶体直径。

    Recovery of germanium-68 from irradiated targets
    4.
    发明授权
    Recovery of germanium-68 from irradiated targets 失效
    从辐照目标回收锗68

    公开(公告)号：US5190735A

    公开(公告)日：1993-03-02

    申请号：US860617

    申请日：1992-03-30

    申请人： Dennis R. Phillips ,  David J. Jamriska, Sr. ,  Virginia T. Hamilton

    发明人： Dennis R. Phillips ,  David J. Jamriska, Sr. ,  Virginia T. Hamilton

    IPC分类号： C01G17/00 ,  C01G33/00 ,  C22B41/00 ,  G21G1/10 ,  G21G4/08

    CPC分类号： G21G4/08 ,  C22B3/24 ,  C22B3/42 ,  C22B41/00 ,  G21G1/10 ,  Y02P10/234

    摘要： A process for selective separation of germanium-68 from proton irradiated molybdenum targets is provided and includes dissolving the molybdenum target in a hydrogen peroxide solution to form a first ion-containing solution, contacting the first ion-containing solution with a cationic resin whereby ions selected from the group consisting of molybdenum, niobium, technetium, selenium, vanadium, arsenic, germanium, zirconium and rubidium remain in a second ion-containing solution while ions selected from the group consisting of rubidium, zinc, beryllium, cobalt, iron, manganese, chromium, strontium, yttrium and zirconium are selectively adsorbed by the first resin, adjusting the pH of the second ion-containing solution to within a range of from about 0.7 to about 3.0, adjusting the soluble metal halide concentration in the second ion-containing solution to a level adapted for subsequent separation of germanium, contacting the pH-adjusted, soluble metal halide-containing second ion-containing solution with a dextran-based material whereby germanium ions are separated by the dextran-based material, and recovering the germanium from the dextran-based material, preferably by distillation.

    摘要翻译： 提供了从质子照射的钼靶中选择性分离锗-68的方法，包括将钼靶溶解在过氧化氢溶液中以形成第一含离子的溶液，使第一含离子溶液与阳离子树脂接触，从而使离子选择 来自由钼，铌，锝，硒，钒，砷，锗，锆和铷组成的组保留在第二离子含有溶液中，而离子选自铷，锌，铍，钴，铁，锰， 铬，锶，钇和锆被第一树脂选择性吸附，将第二含离子溶液的pH调节至约0.7至约3.0的范围内，调节第二含离子溶液中的可溶性金属卤化物浓度 达到适于随后分离锗的水平，与pH调节的可溶性金属卤化物的第二离子包含物接触 其中锗离子被葡聚糖基材料分离，并且优选通过蒸馏从葡聚糖基材料中回收锗。

    Process for purifying solid substances
    8.
    发明授权
    Process for purifying solid substances 失效
    固体物质纯化方法

    公开(公告)号：US4231755A

    公开(公告)日：1980-11-04

    申请号：US907442

    申请日：1978-05-19

    申请人： Heinz Herzer ,  Heinz-Jorg Rath ,  Dietrich Schmidt

    发明人： Heinz Herzer ,  Heinz-Jorg Rath ,  Dietrich Schmidt

    IPC分类号： B01D9/02 ,  B01D9/00 ,  C01B33/037 ,  C22B9/02 ,  C22B41/00 ,  B01D9/04

    CPC分类号： C01B33/037 ,  B01D9/0013 ,  C22B41/00 ,  C22B9/02 ,  Y02P10/234

    摘要： A process for purifying solid substances by melting and subsequent resoliication, wherein a melted bath of the solid substance is formed, a roller is placed in the bath so that a first portion of its surface is in contact with the melted substance, and the surface of the roller is cooled to a temperature below the melting point of the solid substance. The cooled roller is rotated in the melted substance to collect a solidified film of the substance on the roller surface. A second portion of the roller surface is passed through a heated zone at a temperature above the melting point of the solid substance, so that the solidified film is remelted and collected in an appliance.

    摘要翻译： 一种通过熔融和随后的重新固化纯化固体物质的方法，其中形成固体物质的熔融浴，将辊放置在浴中，使得其表面的第一部分与熔融物质接触， 将辊冷却至低于固体物质熔点的温度。 冷却的辊在熔融物质中旋转以在辊表面上收集物质的固化膜。 辊表面的第二部分在高于固体物质的熔点的温度下通过加热区域，使得固化的膜被重熔并收集在器具中。

    Method of purifying germanium bodies
    9.
    发明授权
    Method of purifying germanium bodies 失效
    锗体净化方法

    公开(公告)号：US4165249A

    公开(公告)日：1979-08-21

    申请号：US772100

    申请日：1977-02-25

    申请人： Walter Heywang

    发明人： Walter Heywang

    IPC分类号： C22B9/02 ,  C22B9/14 ,  C22B41/00 ,  C30B13/00 ,  C30B13/06 ,  C30B29/08

    CPC分类号： C22B41/00 ,  C22B9/02 ,  C22B9/14 ,  C30B13/00 ,  C30B29/08 ,  Y02P10/234

    摘要： A germanium body containing impurities therein, such as B or Al is provided with a layer of a gettering material such as pure Si or SiO.sub.2, along at least one surface of the body, a melt zone is generated about the so-coated body and passed a number of times from one end of the body to the other whereby the gettering material binds the impurities within the germanium body and complex-impurity compounds accumulate at the respective ends of the body. After a desired degree of purity is achieved, the melt zone is deenergized and the impurity-containing ends are severed from the remaining body portion and any excess gettering material is removed.

    摘要翻译： 在其中含有杂质的锗体例如B或Al在主体的至少一个表面上设置有诸如纯Si或SiO 2的吸气材料层，在涂覆体周围产生熔融区并通过 多次从身体的一端到另一端，吸气材料结合锗体内的杂质，并且复杂的杂质化合物在身体的各个端部积聚。 在达到期望的纯度之后，熔融区被断电，并且含杂质的端部与剩余的主体部分断开，并且除去任何多余的吸气材料。