High gain transistor comprising direct connection between base and emitter electrodes

Invention Grant

US3210617A High gain transistor comprising direct connection between base and emitter electrodes 失效

Title translation: 包括基极和发射极之间的直接连接的高增益晶体管

Patent Title: High gain transistor comprising direct connection between base and emitter electrodes
Patent Title (中): 包括基极和发射极之间的直接连接的高增益晶体管
Application No.: US8202061

Application Date: 1961-01-11
Publication No.: US3210617A

Publication Date: 1965-10-05
Inventor: KRUPER ANDREW P
Applicant: WESTINGHOUSE ELECTRIC CORP
Assignee: Westinghouse Electric Corp
Current Assignee: Westinghouse Electric Corp
Priority: US8202061 1961-01-11
Main IPC: H01L21/00
IPC: H01L21/00 ; H01L27/07 ; H01L27/082 ; H03F3/347

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备