Invention Grant
- Patent Title: Method of epitaxialiy producing p-n junctions in silicon
- Patent Title (中): 在硅中外延生产p-n结的方法
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Application No.: US38200964Application Date: 1964-07-13
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Publication No.: US3409481APublication Date: 1968-11-05
- Inventor: HANS MERKEL , SIEGFRIED LEIBENZEDER
- Applicant: SIEMENS AG
- Assignee: Siemens Ag
- Current Assignee: Siemens Ag
- Priority: DES0086210 1963-07-17; DES0086211 1963-07-17
- Main IPC: C30B25/02
- IPC: C30B25/02 ; H01L21/00 ; H01L21/205 ; H01L21/3065
Information query
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