Method for producing hyperpure gallium
    6.
    发明授权
    Method for producing hyperpure gallium 失效
    生产超纯镓的方法

    公开(公告)号:US3192139A

    公开(公告)日:1965-06-29

    申请号:US11621461

    申请日:1961-04-19

    Applicant: SIEMENS AG

    Inventor: HANS MERKEL

    CPC classification number: C25C7/005 C25C3/34 C30B13/00 C30B29/02

    Abstract: 913,028. Electrolytically purifying gallium. SIEMENS' - SCHUCKERTWERKE A.G. April 20, 1961 [April 21, 1960], No. 14391/61. Class 41. Gallium is purified by subjecting it to melt electrolysis using as electrolyte a halide of divalent Ga, e.g. GaBr 2 , purified to an extremely high degree by a zone purification method performed one or more times. Fig. 1 shows apparatus comprising an anode at 3 of impure liquid Ga, a cathode at 4 of pure liquid Ga and an electrolyte, e.g. of GaBr 2 , at 1 heated by a furnace 2 to about 190‹ C. Current is supplied by conductors 5 and 6 having Pt points 5a and 6a. An anode current density of 5-10 amps./dm. 2 and a terminal voltage of 0.5 to 1 v. are specified. The GaBr 2 is said to be in the form of Ga + (GaBr 4 ) - and the current yield 100%. The cathode product of one cell may be fed to the anode of a following cell for further purification. Fig. 3 shows apparatus for larger scale working. Ga to form the anode is fed from a storage vessel 39 to the cell 32 via a syphon 40, a level controller 41 being provided. A furnace for heating the cell has a winding 48. Purified cathodic Ga 33, 34 is removed at 44. The parts of the apparatus may be constructed of glass, quartz glass or materials resembling quartz glass.

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