发明授权
- 专利标题： Connector structure for housing of pressure-biased semiconductor device
- 专利标题（中）： 压力半导体器件外壳连接器结构
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申请号： US3559004D申请日： 1969-01-28
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公开(公告)号： US3559004A公开(公告)日： 1971-01-26
- 发明人: RAMBEAU HARRY , KIRSCHNER FRITZ
- 申请人： SIEMENS AG
- 专利权人： Siemens Ag
- 当前专利权人： Siemens Ag
- 优先权： DE1639402 1968-02-08; DES0114041 1968-02-08
- 主分类号： H01L23/049
- IPC分类号： H01L23/049 ; H01L23/16 ; H01L23/48 ; H01L1/14
摘要：
FIRST AND SECOND ELECTRICAL CONNECTORS PASS THROUGH THE HOUSING OF A SEMICONDUCTOR DEVICE IN A GAS-TIGHT MANNER AND ARE ELECTRICALLY INSULATED FROM THE HOUSING AND FROM EACH OTHER. THE FIRST CONNECTOR IS IN ELECTRICAL CONTACT WITH AN ELECTRICALLY CONDUCTIVE BODY AND WITH A FIRST CONTACT ELECTRODE OF THE SEMICONDUCTOR DEVICE VIA THE CON-
DUCTIVE BODY, A PLURALITY OF SPRING DISCS AND A PRESSURE MEMBER. THE SECOND CONNECTOR IS IN ELECTRICAL CONTACT WITH THE CONTROL ELECTRODE OF THE SEMICONDUCTOR DEVICE.
DUCTIVE BODY, A PLURALITY OF SPRING DISCS AND A PRESSURE MEMBER. THE SECOND CONNECTOR IS IN ELECTRICAL CONTACT WITH THE CONTROL ELECTRODE OF THE SEMICONDUCTOR DEVICE.
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