Invention Grant
US3559097A High power,high efficiency silicon avalanche diode uhf and l band oscillator
失效
高功率，高效率的半导体二极管UHF和L带振荡器
- Patent Title: High power,high efficiency silicon avalanche diode uhf and l band oscillator
- Patent Title (中): 高功率，高效率的半导体二极管UHF和L带振荡器
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Application No.: US3559097DApplication Date: 1969-02-05
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Publication No.: US3559097APublication Date: 1971-01-26
- Inventor: CHANG KERN K N , PRAGER HANS J , WEISBROD SHERMAN
- Applicant: RCA CORP
- Assignee: RCA Corp
- Current Assignee: RCA Corp
- Priority: US79684669 1969-02-05
- Main IPC: H03B9/14
- IPC: H03B9/14 ; H03B7/06
Abstract:
A IMPROVED SILICON AVALANCHE DIODE OSCILLATOR FOR PULSED OPERATION IN THE UHF OR L BAND, WHICH HAS AN EFFCIENCY (40 PERCENT OR BETTER) AT LEAST EQUAL TO THAT OF VACUUM TUBE OSCILLATORS OPERATING AT THESE FREQUENCIES, IS OBTAINED BY UTILIZING AT LEAST THREE SPACED SLIDING SHORT STUB TUNERS AS PART OF A COAXIAL STRUCTURE IN WHICH IS SITUATED THE DIODE.
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