Abstract:
A IMPROVED SILICON AVALANCHE DIODE OSCILLATOR FOR PULSED OPERATION IN THE UHF OR L BAND, WHICH HAS AN EFFCIENCY (40 PERCENT OR BETTER) AT LEAST EQUAL TO THAT OF VACUUM TUBE OSCILLATORS OPERATING AT THESE FREQUENCIES, IS OBTAINED BY UTILIZING AT LEAST THREE SPACED SLIDING SHORT STUB TUNERS AS PART OF A COAXIAL STRUCTURE IN WHICH IS SITUATED THE DIODE.
Abstract:
A switching circuit connected between a power supply and a load such as a trapatt diode amplifier. The amplifying element is protected from destruction, in the event that the amplifier should break into oscillation. Two serially connected monostable multivibrators control the conduction state of a transistor whose collectoremitter conduction path is in series with the amplifier, thereby limiting the peak, steady-state and average power that the power supply can deliver.
Abstract:
AN AVALANCHE DIODE IN COOPERATIVE RELATIONSHIP WITH A UHF OR L BAND WAVE TUNING STRUCTURE AMPLIFIERS LOW POWER OSCILLATIONS AT A FREQUENCY IN THE UHF OR L BAND APPLIED TO THE WAVE TUNING STRUCTURE, IF THE AVALANCHE DIODE IS BIASED WITH A BIAS LEVEL SLIGHTLY BELOW THE THRESHOLD VALUE AT WHICH FREE RUNNING OSCILLATIONS TAKE PLACE.