Invention Grant
US3575617A Field effect transistor, content addressed memory cell 失效
场效应晶体管,内容寻址存储单元

  • Patent Title: Field effect transistor, content addressed memory cell
  • Patent Title (中): 场效应晶体管,内容寻址存储单元
  • Application No.: US3575617D
    Application Date: 1968-12-27
  • Publication No.: US3575617A
    Publication Date: 1971-04-20
  • Inventor: BURNS JOSEPH R
  • Applicant: RCA CORP
  • Assignee: RCA Corp
  • Current Assignee: RCA Corp
  • Priority: US78733168 1968-12-27
  • Main IPC: G11C15/04
  • IPC: G11C15/04 H03K3/356 H03K3/26
Field effect transistor, content addressed memory cell
Abstract:
A field-effect transistor flip-flop and three lines coupled through other field effect transistors to the flip-flop for permitting information to be read from and written into the flipflop nondestructively and for producing, in response to a voltage indicative of a tag bit applied to one of said lines, a signal indicative of a match or mismatch on another of said lines. The invention described herein was made in the course of or under a contract or sub-contract thereunder with the Department of the Air Force.
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