Invention Grant
- Patent Title: Field effect transistor, content addressed memory cell
- Patent Title (中): 场效应晶体管,内容寻址存储单元
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Application No.: US3575617DApplication Date: 1968-12-27
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Publication No.: US3575617APublication Date: 1971-04-20
- Inventor: BURNS JOSEPH R
- Applicant: RCA CORP
- Assignee: RCA Corp
- Current Assignee: RCA Corp
- Priority: US78733168 1968-12-27
- Main IPC: G11C15/04
- IPC: G11C15/04 ; H03K3/356 ; H03K3/26
Abstract:
A field-effect transistor flip-flop and three lines coupled through other field effect transistors to the flip-flop for permitting information to be read from and written into the flipflop nondestructively and for producing, in response to a voltage indicative of a tag bit applied to one of said lines, a signal indicative of a match or mismatch on another of said lines. The invention described herein was made in the course of or under a contract or sub-contract thereunder with the Department of the Air Force.
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